Efficient data transferWith internal data rates reaching up to 7250 MBps, data can be transferred swiftly, enabling faster boot times and quicker application load speeds.High durabilityFeaturing a shock resistance of up to 1500 g and a vibration tolerance, this drive is rugged enough to withstand physical stress, ensuring reliable operation in various environments.Advanced performance managementSupports TRIM, Auto Garbage Collection, and Device Sleep to optimize performance and extend the lifespan of the drive, making it suitable for both everyday use and demanding applications.Enhanced security featuresEquipped with 256-bit AES hardware encryption and TCG Opal Encryption 2.0, the drive provides robust security measures to protect sensitive data from unauthorized access.
Спецификации
- Предназначен заЛаптопи
- Външен/ вътрешенSolid state drive - internal
- Форм-факторM.2 2280
- Капацитет, GB4 TB
- Скорост на четене, MB/s7250 MBps (read) / 6300 MBps (write)
- ИнтерфейсPCIe 5.0 x2 (NVMe)
- Гаранция60 месеца
- ДругиStorage Memory: Samsung V-NAND TLC; Cache Memory: HMB(Host Memory Buffer)
- Скорост на запис, MB/sUp to 6300 MB/s
- Тегло, кг.9 g
- ЦвятN/A
- Тегло, gMax 9 g
- Размери (Ш, Д, В), mm80.2 x 22.2 x 2.4 mm






















