Enhanced durabilityWith an MTBF of 1,500,000 hours and a robust integrated heatsink, this hard drive ensures reliability and longevity, making it a smart investment for serious users.Exceptional performanceBoasting an internal data rate of up to 7450 MBps for reading and 6900 MBps for writing, alongside maximum 4KB random reads of 1600000 IOPS and writes of 1550000 IOPS, this drive delivers swift and efficient data access and transfer.Advanced securityEquipped with 256-bit AES hardware encryption and TCG Opal Encryption, this device offers reliable data protection, keeping your sensitive information safe from unauthorized access.Innovative technologyFeaturing Samsung V-NAND 3bit MLC Technology, Garbage Collection technology, and TRIM support, this hard drive is designed for optimal performance and durability.Energy efficientWith a low power consumption of 5.5 W during average use and just 55 mW when idle, this hard drive is not only powerful but also energy efficient, reducing your carbon footprint and electricity costs.
Спецификации
- Предназначен заЛаптопи
- Външен/ вътрешенSolid state drive - internal
- Форм-факторM.2 2280
- Капацитет, GB4 TB
- Скорост на четене, MB/s7450 MBps (read) / 6900 MBps (write)
- ИнтерфейсPCIe 4.0 x4 (NVMe)
- Гаранция60 месеца
- ДругиStorage Memory: V-NAND 3-bit MLC; Samsung in-house Controller; Cache Memory: 1GB Low Power DDR4 SDRAM
- Скорост на запис, MB/sUp to 6900 MB/s
- Тегло, кг.28 g
- ЦвятN/A
- Тегло, gMax 28 g
- Размери (Ш, Д, В), mm80 x 24.3 x 8.2 mm (with heatsink)



























